Upgrades to Keysight’s double-pulse test systems bring easier and even higher-accuracy measurement of dynamic characteristics ...

Teledyne LeCroy exhibited its HDO6104B four-channel 12-bit oscilloscope and assorted voltage, differential, and current ...

Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based ...

The team from Wisconsin-Madison claims to be the first to break the 2 kV barrier for monolithic bidirectional GaN HEMTs, with ...

Power device makers roll out their latest advances at APEC 2025, targeting a range of applications from AI data centers to ...

Nexperia has expanded its GaN FET portfolio with 12 new E-mode devices, available in both low- and high-voltage options.

EPC launches the EPC2367 100-V GaN FET with an ultra-low on-resistance and higher efficiency for AI servers, robotics, and automotive power.

Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power ...

TI has unveiled a new range of power-management chips to support the rapidly growing power needs of data centres.

STMicroelectronics’ VIPerGaN65D flyback converter, with its SOIC16 outline, permits extremely small and economical power ...

Mitsubishi has launched a 16W GaN power amplifier module for 5G massive MIMO base stations. Takeaway Points Mitsubishi has ...

Mitsubishi Electric announced that it will begin shipping samples of a new 16W-average-power gallium nitride (GaN) power ...