Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...
EPC launches the EPC2367 100-V GaN FET with an ultra-low on-resistance and higher efficiency for AI servers, robotics, and automotive power.
Upgrades to Keysight’s double-pulse test systems bring easier and even higher-accuracy measurement of dynamic characteristics ...
Power device makers roll out their latest advances at APEC 2025, targeting a range of applications from AI data centers to ...
Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower cost than all-silicon-carbide ...
Texas Instruments (TI) (Nasdaq: TXN) today debuted new power-management chips to support the rapidly growing power needs of ...
STMicroelectronics’ VIPerGaN65D flyback converter, with its SOIC16 outline, permits extremely small and economical power ...
The team from Wisconsin-Madison claims to be the first to break the 2 kV barrier for monolithic bidirectional GaN HEMTs, with ...
Teledyne LeCroy exhibited its HDO6104B four-channel 12-bit oscilloscope and assorted voltage, differential, and current ...
High Electron Mobility Transistor Market Expected to Reach $9.3 Billion by 2031 - Allied Market Research David Correa Allied Market Research + 1800-792-5285 email us here Visit us on social media: ...
Mitsubishi Electric announced that it will begin shipping samples of a new 16W-average-power gallium nitride (GaN) power ...
13d
The ultimate power semiconductor switch (transistor) can block voltage and allow current flow in two directions, with the highest efficiency. Navitas’ leadership in GaN innovation has delivered this ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback