EPC launches the EPC2367 100-V GaN FET with an ultra-low on-resistance and higher efficiency for AI servers, robotics, and automotive power.

Upgrades to Keysight’s double-pulse test systems bring easier and even higher-accuracy measurement of dynamic characteristics ...

Power device makers roll out their latest advances at APEC 2025, targeting a range of applications from AI data centers to ...

The team from Wisconsin-Madison claims to be the first to break the 2 kV barrier for monolithic bidirectional GaN HEMTs, with ...

Teledyne LeCroy exhibited its HDO6104B four-channel 12-bit oscilloscope and assorted voltage, differential, and current ...

With the transition from silicon transistors to gallium nitride (GaN) transistors ... Also: This portable power station has a standout feature that makes camping safer than ever Whether you ...

With multimode operation, integrated PFC, and support for Si and GaN devices, it ensures optimal efficiency across varying loads while meeting stringent energy regulations.

The future is “more than Moore” While Moore’s Law has driven semiconductor innovation for decades, we are entering an era where performance is enhanced not just by shrinking transistor ... gallium ...

Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power ...

Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based ...

Nexperia has expanded its GaN FET portfolio with 12 new E-mode devices, available in both low- and high-voltage options.

ROHM has developed a new thermal printhead - KA2008-B07N70A - compatible with a 2-cell Li-ion battery (7.2V). It is designed ...