The technologies included complementary metal‐oxide semiconductor (CMOS), silicon germanium, and gallium arsenide. Shallow trench isolation (STI) was implemented into semiconductors for MOSFET ...

Hundreds of decommissioned manufacturing tools from Ubiquity Solar, including semiconductor and photovoltaic production lines ...

EPC launches the EPC2367 100-V GaN FET with an ultra-low on-resistance and higher efficiency for AI servers, robotics, and automotive power.

D materials in 3D transistors; electrochemical memristive mechanism; matching substrates for power electronics.

Gallium-nitride (GaN ... HEMTs are somewhat different than other types of FET devices, though, enhancing performance over and above standard junction or MOSFETs. These unique devices excel ...

THE metal gallium, which is the latest discovery among the recognized elements, was first seen by M. Lecoq de Boisbaudran in the autumn of the year 1875, and so named by him in honor of the land ...

What Is Fetch.ai (FET)? Fetch.ai was founded in 2017 by Humayun Sheikh and Toby Simpson, who have backgrounds in AI research and blockchain technology. The project aims to create a decentralized ...

Space-grade half-bridge GaN FET gate drivers help shrink satellites Texas Instruments has announced a new family of radiation-hardened and radiation-tolerant half-bridge GaN FET gate drivers. This ...