Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...

The post US Sanctions Accidentally Inspired China's Revolutionary Silicon-Free Transistor appeared first on Android Headlines ...

MaxLinear and RFHIC have collaborated on a power amp solution for 5G RUs that lowers power consumption, weight, and volume.

A 650-V bi-directional GaN IC combined with a high-speed isolated gate driver facilitates single-stage power conversion.

Navitas Semiconductor has announced the world’s first production-released 650 V bi-directional GaNFast ICs and high-speed ...

The ultimate power semiconductor switch (transistor) can block voltage and allow current flow in two directions, with the highest efficiency. Navitas’ leadership in GaN innovation has delivered this ...

Their new packages, combined with GaN technology, ensure low-resistance connections and minimal parasitics. Samples of the IGE033S08S1 and IGD015S10S1 GaN transistors in RQFN packages will be ...

"We are excited to enhance the performance of our audio amplifiers using Infineon's GaN power semiconductors, enabling us to inspire people and provide entertainment by amplifying music around the ...

The ID Series GaN power transistors operate from 1.8GHz to 4.2GHz, with available saturated power levels of 410W, 460W, 700W, and 800W. Additionally, RFHIC provides 2-stage hybrid drive amplifiers ...