Hundreds of decommissioned manufacturing tools from Ubiquity Solar, including semiconductor and photovoltaic production lines ...

Since the early 1970s, scientists have been promoting gallium arsenide as a faster, more efficient substrate material than silicon for making integrated-circuit chips. However, the vast majority of ...

GaN and GaAs are used for a variety of transistors, including bipolar junction (BJT), enhancement-mode MOSFET and high electron mobility (HEMT). See gallium nitride and gallium arsenide.

In 2001, Motorola developed a technique that places a spongy layer between gallium arsenide and silicon on the same wafer. Combining these two materials yields a higher-speed product at a lower cost.

The most optimal material for solid-state lasers in photonics is gallium-arsenide (GaAs), but due to the misalignment of the crystal lattice between the compound (group III-V) semiconductor and ...

The approach, termed ‘germanium on nothing’, could enable the cost effective, high volume production of PV cells based on III-V materials such as gallium arsenide. June 10, 2019 Mark Hutchins ...

material which could improve the efficiency of multi-junction solar cells based on III-V elements such as gallium arsenide. In the paper Uprooting defects to enable high-performance III–V ...